Model/Brand/Package
Category/Description
Inventory
Price
Data
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Category: Schottky diodeDescription: INFINEON IDW20G65C5FKSA1 Diode, silicon carbide Schottky, SIC, thinQ 5G 650V series, single, 650 V, 20 A, 29 nC, TO-24790451+$58.041510+$54.7113100+$52.2374250+$51.8568500+$51.47621000+$51.04802500+$50.66745000+$50.4295 -
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Category: Schottky diodeDescription: thinQ! Silicon carbide (SiC) Schottky diode, Infineon Infineon thinQ! ™ The 5th generation provides a new thin chip technology for silicon carbide Schottky barrier diodes, which can improve heat resistance. Silicon carbide Schottky diode devices have significant advantages in providing high-voltage power semiconductor characteristics, such as increasing breakdown electric field strength and enhancing thermal conductivity, thereby improving efficiency. The latest generation of products is suitable for telecommunications SMPS and high-end servers, UPS systems, motor drives, solar inverters, as well as PC Silverboxes and lighting applications. Reduced EMI # # # diodes and rectifiers, Infineon84721+$41.849710+$39.4485100+$37.6647250+$37.3903500+$37.11581000+$36.80712500+$36.53275000+$36.3612 -
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Category: Schottky diodeDescription: thinQ!™ Silicon carbide (SiC) Schottky diode, Infineon Infineon thinQ! ™ The 5th generation provides a new thin chip technology for silicon carbide Schottky barrier diodes, which can improve heat resistance. Infineon thinQ! ™ Schottky diodes have voltage options of 600V, 650V, and 1200V. Infineon 1200V silicon carbide diodes are highly efficient and operate without losses at 1200V. Silicon carbide Schottky diodes provide various functions for high-voltage power semiconductors, such as higher breakdown electric field strength and thermal conductivity, which can provide higher levels of efficiency. This generation of products is suitable for telecommunications SMPS and high-end servers, UPS systems, motor drives, solar inverters, PC Silverboxes, and lighting applications. Reduced EMI # # # diodes and rectifiers, Infineon88095+$5.493225+$5.086350+$4.8014100+$4.6794500+$4.59802500+$4.49625000+$4.455610000+$4.3945 -
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Category: Schottky diodeDescription: The second generation ThinQ! SiC Schottky diode 2nd Generation thinQ! SiC Schottky Diode2220 -
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Category: Schottky diodeDescription: thinQ!™ Silicon carbide (SiC) Schottky diode, Infineon Infineon thinQ! ™ The 5th generation provides a new thin chip technology for silicon carbide Schottky barrier diodes, which can improve heat resistance. Infineon thinQ! ™ Schottky diodes have voltage options of 600V, 650V, and 1200V. Infineon 1200V silicon carbide diodes are highly efficient and operate without losses at 1200V. Silicon carbide Schottky diodes provide various functions for high-voltage power semiconductors, such as higher breakdown electric field strength and thermal conductivity, which can provide higher levels of efficiency. This generation of products is suitable for telecommunications SMPS and high-end servers, UPS systems, motor drives, solar inverters, PC Silverboxes, and lighting applications. Reduced EMI # # # diodes and rectifiers, Infineon64925+$26.110950+$24.9950200+$24.3702500+$24.21391000+$24.05772500+$23.87925000+$23.76767500+$23.6560 -
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Category: Schottky diodeDescription: thinQ!™ Silicon carbide (SiC) Schottky diode, Infineon Infineon thinQ! ™ The 5th generation provides a new thin chip technology for silicon carbide Schottky barrier diodes, which can improve heat resistance. Infineon thinQ! ™ Schottky diodes have voltage options of 600V, 650V, and 1200V. Infineon 1200V silicon carbide diodes are highly efficient and operate without losses at 1200V. Silicon carbide Schottky diodes provide various functions for high-voltage power semiconductors, such as higher breakdown electric field strength and thermal conductivity, which can provide higher levels of efficiency. This generation of products is suitable for telecommunications SMPS and high-end servers, UPS systems, motor drives, solar inverters, PC Silverboxes, and lighting applications. Reduced EMI # # # diodes and rectifiers, Infineon78895+$19.479350+$18.6469200+$18.1807500+$18.06421000+$17.94762500+$17.81445000+$17.73127500+$17.6479 -
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Category: Schottky diodeDescription: INFINEON IDP40E65D2 Standard power diode, single, 650 V, 40 A, 1.6 V, 36 ns, 250 A543410+$11.5716100+$10.9930500+$10.60731000+$10.58802000+$10.51095000+$10.41447500+$10.337310000+$10.2987 -
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Category: Schottky diodeDescription: Infineon **Infineon** 开关发射器控制二极管是快速 1和快速 2系列，还有 600V/1200V 超软二极管。 这些二极管可在各种应用中工作，如电信、UPS、焊接和交流-直流，超软型号可在高达 30kHz 的电动机驱动应用中工作 _**快速 1 **_二极管可在 18kHz 与 40kHz 之间切换 1.35V 温度稳定的正向电压 特别适用于功率因数校正 (PFC) 拓扑 **_快速 2 二极管_**可在 40kHz 与 100kHz 之间切换 低反向恢复电荷:正向电压比，确保 BiC 性能 短反向恢复时间 启动开关上低开启损耗 _**超快二极管**_ 600V/1200V 发射器控制技术 符合 JEDEC 标准 良好的 EMI 行为 低传导损耗 易于并联6845 -
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Category: Schottky diodeDescription: Infineon 二极管 IDH20G65C5 肖特基, Io=20A, Vrev=650V, 2引脚 TO-220封装6581 -
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Category: Schottky diodeDescription: INFINEON IDH05S60CAKSA1 二极管, 碳化硅肖特基, thinQ 2G 600V系列, 单, 600 V, 5 A, 12 nC, TO-2201334 -
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Category: Schottky diodeDescription: Infineon 二极管 IDH06SG60CXKSA2 开关 肖特基, Io=6A, Vrev=600V, <10ns, 2引脚 TO-220封装8084
